View IPB200N25N3G_4967666.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 250 20 64 V m A
* Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 64 46 256 320 20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 C I D=47 A, R GS=25
mJ V W C
T C=25 C
300 -55 ... 175 55/175/56
J-STD20 and JESD22 See figure 3
Rev. 2.2
page 1
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA minimal footprint 6 cm2 cooling area 3) 0.5 62 40 K/W
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=200 V, V GS=0 V, T j=25 C V DS=200 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=64 A V GS=20 V, V DS=0 V V GS=10 V, I D=64 A 250 2 3 0.1 4 1 A V
61
10 1 17.5 2.4 122
100 100 20 nA m S
2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air.
3)
Rev. 2.2
page 2
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge
4)
C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=25 A, R G=1.6 V GS=0 V, V DS=100 V, f =1 MHz
-
5340 297 4 18 20 45 12
7100 395 -
pF
ns
Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=100 V, I D=25 A, V GS=0 to 10 V
-
22 7 13 64 4.2 135
86 179
nC
V nC
IS I S,pulse V SD t rr Q rr
T C=25 C V GS=0 V, I F=64 A, T j=25 C V R=100 V, I F=25 A, di F/dt =100 A/s
-
1 170 780
64 256 1.2 -
A
V ns nC
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
1 Power dissipation P tot=f(T C)
2 Drain current I D=f(T C); V GS10 V
320
70
280
60
240 50 200
P tot [W]
40 160
I D [A]
30 20 10 0 0 50 100 150 200 0 50 100 150 200
120
80
40
0
T C [C]
T C [C]
3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p
103
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
1 s
102
10 s 100 s 0.5
1 ms
Z thJC [K/W]
I D [A]
101
10 ms
10-1
0.2
0.1
DC
0.05 0.02 0.01 single pulse
10
0
10-1 10-1 100 101 102 103
10-2 10-5 10-4 10-3 10-2 10-1 100
V DS [V]
t p [s]
Rev. 2.2
page 4
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
150
10 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
30
125
7V 5V
25
4.5 V
5V
100
20
7V 10 V
75
R DS(on) [m]
4.5 V
I D [A]
15
50
10
25
5
0 0 1 2 3 4 5
0 0 20 40 60 80 100 120 140
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
140
8 Typ. forward transconductance g fs=f(I D); T j=25 C
180 160 140
120
100 120 80 100 80 60 40 40 20
175 C 25 C
60
g fs [S]
0 2 4 6 8
I D [A]
20 0 0 25 50 75 100 125
0
V GS [V]
I D [A]
Rev. 2.2
page 5
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=64 A; V GS=10 V
10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
70
4
60
3.5
2700 A
50
3
270 A
R DS(on) [m]
2.5
V GS(th) [V]
typ
40
2
30
98%
1.5 20
1 10
0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
Ciss
103
103
Coss
102
175 C 25C, 98%
C [pF]
102
I F [A]
175C, 98%
10
Crss
1
25 C
101
100 0 40 80 120 160 0 0.5 1 1.5 2
V DS [V]
V SD [V]
Rev. 2.2
page 6
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD
10
8
25 C 200 V
100 C
6
125 V
10
125 C
V GS [V]
I AS [A]
50 V
4
2
1 1 10 100 1000
0 0 20 40 60 80
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
290
V GS
280
Qg
270
V BR(DSS) [V]
260
250
V g s(th)
240
230
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
220
T j [C]
Rev. 2.2
page 7
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
PG-TO220-3: Outline
Rev. 2.2
page 8
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
PG-TO263-3: Outline
Rev. 2.2
page 9
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
PG-TO262-3: Outline
Rev. 2.2
page 10
2009-10-23
IPB200N25N3 G
IPP200N25N3 G IPI200N25N3 G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.2
page 11
2009-10-23

▲Up To Search▲

Price & Availability of IPB200N25N3G

	To Download IPB200N25N3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .